作者单位
摘要
中航工业洛阳电光设备研究所,河南 洛阳 471009
为了实现光谱的有效分离,二向色镜已被广泛应用于各类光学系统。针对多光谱探测系统红外二向色镜,分析了基底和薄膜材料特性,选择了锗(Ge)为基底,锗和硫化锌(ZnS)的膜料组合,以传统的长波通膜系为初始结构,借助于软件优化膜系,并对优化后的膜系进行镀制;对研制的红外二向色镜光谱特性和环境可靠性进行了测试,测试结果表明各项指标均满足系统要求。并已成功应用于红外多光谱探测系统。
薄膜 二向色镜  
中国激光
2014, 41(s1): s116008
作者单位
摘要
中航工业洛阳电光设备研究所, 河南 洛阳 471009
激光/电视分光膜实现了光路的“二光合一”, 简化了光学系统结构, 在军用光学系统中得到了广泛应用。采用匹配层和Refinement计算机辅助法设计了激光电视分光膜, 并对所设计的膜层进行镀制; 最后, 对制备的激光电视分光膜进行测试, 结果表明膜层各项性能指标符合设计要求。
分光膜 棱镜 匹配层 膜系设计 beam splitter prism matching layer design of film system 
电光与控制
2010, 17(11): 79
Getao Tao 1,*Shun Yao 1Guoguang Lu 1,2Yun Liu 1,2[ ... ]Lijun Wang 1,2
Author Affiliations
Abstract
1 State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 Graduate School of the Chinese Academy of Sciences, Beijing 100039
High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.
140.5960 Semiconductor lasers 310.1620 Interference coatings 040.1240 Arrays 140.3290 Laser arrays 
Chinese Optics Letters
2007, 5(s1): 154
Guoguang Lu 1,2,*Chunfeng He 1,2Li Qin 1,2Getao Tao 1,2[ ... ]Lijun Wang 1
Author Affiliations
Abstract
1 State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 Graduate School of the Chinese Academy of Sciences, Beijing 100039
The design, fabrication, and characteristics calculation of 980-nm optically pumped semiconductor disk laser are reported. The laser combines a vertical cavity semiconductor laser with a partically reflecting out coupler and an external cavity for mode control. Pumped by 808-nm diode laser, the disk laser directly generates a linearly polarized, circularly symmetric, diffraction-limited beam with watt-level power. Calculation shows the laser with active region of InGaAs/GaAsP/AlGaAs system can operate at near 500-mW in a single transverse mode.
140.3480 Lasers, diode-pumped 140.5960 Semiconductor lasers 
Chinese Optics Letters
2007, 5(s1): 151

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